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document number: 94476 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 10-sep-08 1 igbt pim module, 12 a GB10RF60K vishay high power products features ?low v ce(on) non punch through igbt technology ? low diode v f ? 10 s short circuit capability ? square rbsoa ? hexfred ? antiparallel diode with ultrasoft reverse recovery characteristics ?positive v ce(on) temperature coefficient ? ceramic dbc substrate ? low stray inductance design ? speed 8 to 60 khz ? totally lead (pb)-free ? designed and qualified for industrial market benefits ? benchmark efficiency for motor control ? rugged transient performance ? low emi, requires less snubbing ? direct mounting to heatsink ? pcb solderable terminals ? low junction to ca se thermal resistance ? ul approved e78996 product summary v ces 600 v v ce(on) (typical) 1.61 v t sc at t j = 150 c > 10 s i c at t c = 80 c 12 a econo2 pim rohs compliant absolute maximum ratings parameter symbol test conditions max. units inverter collector to emitter voltage v ces 600 v gate to emitter voltage v ges 20 continuous collector current i c t c = 25 c 20 a t c = 80 c 12 pulsed collector current see fig. c.t.5 i cm 40 a diode maximum forward current i fm pulsed 40 a power dissipation p d one igbt 25 c 100 w input rectifier repetitive peak reverse voltage v rrm 800 v average output current i f(av) 50/60 hz sine pulse 80 c 10 a surge current (non-repetitive) i fsm rated v rrm applied, 10 ms, sine pulse 310 i 2 t (non-repetitive) i 2 t 525 a 2 s brake collector to emitter voltage v ces 600 v gate to emitter voltage v ges 20 continuous collector current i c t c = 25 c 10 a t c = 80 c 6 pulsed collector current see fig. c.t.5 i cm 20 a power dissipation p d one igbt 25 c 100 w repetitive peak reverse voltage v rrm 600 v maximum operating junction temperature t j 150 c storage temperature range t stg - 40 to + 125 isolation voltage v isol ac (1 min) 2500 v
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94476 2 revision: 10-sep-08 GB10RF60K vishay high power products igbt pim module, 12 a electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units inverter igbt collector to emitter breakdown voltage bv (ces) v ge = 0 v, i c = 500 a 600 - - v temperature coefficient of breakdown voltage v (br)ces / t j v ge = 0 v, i c = 1 ma (25 c to 125 c) -0.25-v/c collector to emitter voltage v ce(on) i c = 10 a, v ge = 15 v - 1.61 1.86 v i c = 20 a, v ge = 15 v - 2.10 2.49 i c = 10 a, v ge = 15 v, t j = 125 c - 1.79 1.97 i c = 20 a, v ge = 15 v, t j = 125 c - 2.45 2.72 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 4 - 6 threshold voltage temperature coefficient v ge(th) / t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 9.1 - mv/c zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - - 100 a v ge = 0 v, v ce = 600 v t j = 125 c - 250 - gate to emitter leakage current i ges v ge = 20 v - - 200 na total gate charge (turn-on) q g i c = 10 a v cc = 300 v v ge = 15 v -5176 nc gate to emitter charge (turn-on) q ge -1218 gate to collector charge (turn-on) q gc -1928 turn-on switching loss e on i c = 10 a, v cc = 300 v v ge = 15 v, r g = 22 l = 500 h, t j = 25 c (1) - 0.19 0.29 mj turn-off switching loss e off - 0.11 0.17 total switching loss e tot - 0.30 0.45 turn-on switching loss e on i c = 10 a, v cc = 300 v v ge = 15 v, r g = 22 l = 500 h, t j = 125 c (1) - 0.24 0.36 turn-off switching loss e off - 0.18 0.28 total switching loss e tot - 0.42 0.63 turn-on delay time t d(on) i c = 10 a, v cc = 300 v v ge = 15 v, r g = 22 l = 500 h, t j = 125 c -87131 ns rise time t r -1726 turn-off delay time t d(off) - 116 174 fall time t f - 161 242 input capacitance c ies v ge = 0 v v cc = 30 v f = 1 mhz - 900 1350 pf output capacitance c oes - 263 395 reverse transfer capacitance c res -3045 inverter igbt reverse bias safe operating area rbsoa t j = 125 c, i c = 40 a r g = 22 , v ge = 15 v to 0 fullsquare short circuit safe operating area scsoa t j = 150 c v cc = 300 v, v p = 600 v r g = 22 , v ge = 15 v to 0 v 10 - - s inverter diode diode peak reverse recovery current i rr t j = 125 c v cc = 300 v, i f = 10 a, l = 500 h r g = 22 , v ge = 15 v -23- a diode forward voltage drop v fm i f = 10 a - 1.23 1.49 v i f = 20 a - 1.43 1.84 i f = 10 a, t j = 125 c - 1.18 1.44 i f = 20 a, t j = 125 c - 1.44 1.79
document number: 94476 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 10-sep-08 3 GB10RF60K igbt pim module, 12 a vishay high power products parameter symbol test conditions min. typ. max. units input rectifier maximum forward voltage drop v fm i f = 10 a - - 1.04 v maximum reverse leakage current i rm t j = 25 c, v r = 800 v - - 0.2 ma t j = 150 c, v r = 800 v - - 1 forward slope resistance r t t j = 150 c - 12.7 - m conduction thresold voltage v f (to) -0.70- v brake igbt collector to emitter breakdown voltage bv (ces) v ge = 0 v, i c = 500 a 600 - - temperature coefficient of breakdown voltage v (br)ces / t j v ge = 0 v, i c = 1 ma (25 c to 125 c) -0.25-v/c collector to emitter voltage v ce(on) i c = 5 a, v ge = 15 v - 1.29 1.43 v i c = 10 a, v ge = 15 v - 1.61 1.80 i c = 5 a, v ge = 15 v, t j = 125 c - 1.37 1.49 i c = 10 a, v ge = 15 v, t j = 125 c - 1.80 2.0 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 4 - 6 threshold voltage temperature coefficient v ge(th) / t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 9.1 - mv/c zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - - 100 a v ge = 0 v, v ce = 600 v t j = 125 c - 150 - gate to emitter leakage current i ges v ge = 20 v - - 200 na total gate charge (turn-on) q g i c = 5 a v cc = 300 v v ge = 15 v -5379 nc gate to emitter charge (turn-on) q ge -1117 gate to collector charge (turn-on) q gc -1827 turn-on switching loss e on i c = 5 a, v cc = 300 v v ge = 15 v, r g = 22 l = 500 h, t j = 25 c (1) - 0.11 0.16 mj turn-off switching loss e off - 0.10 0.14 total switching loss e tot - 0.20 0.30 turn-on switching loss e on i c = 5 a, v cc = 300 v v ge = 15 v, r g = 22 l = 500 h, t j = 125 c (1) - 0.13 0.20 turn-off switching loss e off - 0.17 0.25 total switching loss e tot - 0.30 0.45 turn-on delay time t d(on) i c = 5 a, v cc = 300 v v ge = 15 v, r g = 22 l = 500 h, t j = 125 c - 86 129 ns rise time t r -1218 turn-off delay time t d(off) - 117 176 fall time t f - 184 276 brake igbt input capacitance c ies v ge = 0 v v cc = 30 v f = 1 mhz - 900 1350 pf output capacitance c oes - 263 395 reverse transfer capacitance c res -3045 reverse bias safe operating area rbsoa t j = 150 c, i c = 20 a r g = 22 , v ge = 15 v to 0 fullsquare short circuit safe operating area scsoa t j = 150 c v cc = 300 v, v p = 600 v r g = 22 , v ge = 15 v to 0 10 - - s electrical specifications (t j = 25 c unless otherwise noted)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94476 4 revision: 10-sep-08 GB10RF60K vishay high power products igbt pim module, 12 a note (1) energy losses include ?tail? and diode reverse recovery parameter symbol test conditions min. typ. max. units brake diode diode peak reverse recovery current i rr v cc = 300 v, i f = 5 a, l = 500 h v ge = 15 v to 0, r g = 22 -18- a diode forward voltage drop v fm i f = 5 a - 1.22 1.46 v i f = 10 a - 1.41 1.70 i f = 5 a, t j = 125 c - 1.16 1.43 i f = 10 a, t j = 125 c - 1.41 1.74 ntc resistance r t j = 25 c - 5000 - t j = 100 c - 4933 - b value b t j = 25 c/50 c - 3375 - k electrical specifications (t j = 25 c unless otherwise noted) thermal and mechanical specifications parameter symbol min. typ. max. units junction to case inverter igbt thermal resistance r thjc - - 1.25 c/w junction to case inverter fred thermal resistance - - 2.44 junction to case brake diode thermal resistance - - 3.08 junction to case brake igbt thermal resistance - - 1.25 junction to case input rectifier thermal resistance - - 1.03 case to sink, flat, greased surface r thcs -0.05- mounting torque (m5) 2.7 - 3.3 nm weight - 170 - g
document number: 94476 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 10-sep-08 5 GB10RF60K igbt pim module, 12 a vishay high power products inverter fig. 1 - typical igbt output characteristics t j = 25 c; t p = 80 s fig. 2 - typical igbt output characteristics t j = 125 c, t p = 80 s fig. 3 - typical trans fer characteristics v ce = 50 v; t p = 10 s fig. 4 - typical v ce vs. v ge t j = 25 c fig. 5 - typical v ce vs. v ge t j = 125 c fig. 6 - typical capacitance vs. v ce v ge = 0 v; f = 1 mhz 01234 0 15 30 45 vge=18v vge=15v vge=12v vge=10v vge=8v vce (v) ice (a) 012345 0 15 30 45 vge=18v vge=15v vge=12v vge=10v vge=8v vce (v) ice (a) 02468101214 0 20 40 60 80 100 vge (v) ice (a) tj = 25c tj = 125c 5 101520 0 5 10 15 20 i ce=5a i ce=10a i ce=20a vge (v) vce (v) 0 5 10 15 20 0 5 10 15 20 i ce=5a i ce=10a i ce=20a vge (v) vce (v) 0 102030405060708090100 10 100 1000 10000 vce (v) capacitance (pf) cies coes cres
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94476 6 revision: 10-sep-08 GB10RF60K vishay high power products igbt pim module, 12 a fig. 7 - typical gate charge vs. v ge i ce = 10 a fig. 8 - typical diode fo rward characteristics t p = 80 s fig. 9 - typical energy loss vs. i c t j = 125 c; l = 500 h; v ce = 300 v; r g = 22 ; v ge = 15 v fig. 10 - typical switching time vs. i c t j = 125 c; l = 500 h; v ce = 300 v; r g = 22 ; v ge = 15 v fig. 11 - typical energy loss vs. r g t j = 125 c; l = 500 h; v ce = 300 v; i ce = 10 a; v ge = 15 v fig. 12 - typical switching time vs. r g t j = 125 c; l = 500 h; v ce = 300 v; i ce = 10 a; v ge = 15 v q g , total gate charge (nc) 0204060 0 4 8 12 16 300v v ge (v) 0 0.4 0.8 1.2 1.6 0 15 30 45 vf (v) if (a) tj = 25c tj = 125c ic (a) energy (mj) 2 7 12 17 22 0 0.2 0.4 0.6 0.8 e tot e on e off 7121722 0.001 0.01 0.1 1 ic (a) swiching time (s) t r t f td on td off rg ( ) energy (mj) 0 1020304050 0.1 0.2 0.3 0.4 0.5 e (off) e (on) e (tot) 10 20 30 40 50 0.001 0.01 0.1 1 rg ( ) ) t f td off td on t r
document number: 94476 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 10-sep-08 7 GB10RF60K igbt pim module, 12 a vishay high power products fig. 13 - typical diode i rr vs. i f t j = 125 c fig. 14 - typical diode i rr vs. r g t j = 125 c; i f = 10 a fig. 15 - typical diode i rr vs. di f /dt v cc = 300 v; v ge = 15 v; i f = 10 a; t j = 125 c thermistor fig. 16 - thermistor resistance vs. temperature input rectifier fig. 17 - typical diode forward characteristics t p = 80 s 610141822 10 20 30 40 if (a) irr (a) rg = 4.7 rg = 10 rg = 22 rg = 33 rg = 47 0 1020304050 0 10 20 30 40 rg ( ) ) 0 500 1000 1500 2000 0 10 20 30 40 dif/dt (a/s) irr (a) 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0 2 4 6 8 10 12 14 t h e r m i s t o r r e s i s t a n c e ( k ) 0 0.3 0.6 0.9 1.2 1.5 0 15 30 45 forward voltage drop v f (v) instantaneous forward current i f (a) tj = 25c tj = 125c
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94476 8 revision: 10-sep-08 GB10RF60K vishay high power products igbt pim module, 12 a inverter fig. 18 - maximum transient thermal imp edance, junction to case (inverter igbt) fig. 19 - maximum transient thermal impedanc e, junction to case (inverter fred) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal response) 0.5 0.3 0.1 0.05 0.02 0.01 ri (c/w) 0.256 0.225 0.769 i (sec) 0.000207 0.00051 0.023774 notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc t1 , rectangular pulse duration (sec) thermal response (zth jc ) j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri t c t j 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal response) 0.5 0.3 0.1 0.05 0.02 0.01 notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc t1 , rectangular pulse duration (sec) thermal response (zth jc ) ri (c/w) 0.342 0.856 1.242 i (sec) 0.000114 0.001417 0.035743 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri t c t j
document number: 94476 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 10-sep-08 9 GB10RF60K igbt pim module, 12 a vishay high power products brake fig. 20 - typical igbt output characteristics t j = 25 c; t p = 80 s fig. 21 - typical igbt output characteristics t j = 125 c; t p = 80 s fig. 22 - typical tran sfer characteristics v ce = 50 v; t p = 10 s fig. 23 - typical v ce vs. v ge t j = 25 c fig. 24 - typical v ce vs. v ge t j = 125 c fig. 25 - typical capacitance vs. v ce v ge = 0 v; f = 1 mhz 01234 0 10 20 30 40 vge=18v vge=15v vge=12v vge=10v vge=8v vce (v) ice (a) 012345 0 10 20 30 40 vge=18v vge=15v vge=12v vge=10v vge=8v vce (v) 0 5 10 15 0 25 50 75 100 vge (v) ice (a) tj = 25c tj = 125c 5101520 0 5 10 15 20 i ce=5a i ce=10a i ce=20a vge (v) vce (v) 5101520 0 4 8 12 16 20 i ce=5a i ce=10a i ce=20a vge (v) vce (v) 020406080100 10 100 1000 10000 vce (v) capacitance (pf) cies coes cres
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94476 10 revision: 10-sep-08 GB10RF60K vishay high power products igbt pim module, 12 a fig. 26 - typical gate charge vs. v ge i ce = 5 a fig. 27 - typical diode forward characteristics t p = 80 s fig. 28 - typical energy loss vs. i c t j = 125 c; l = 500 h; v ce = 300 v; r g = 22 ; v ge = 15 v fig. 29 - typical switching time vs. i c t j = 125 c; l = 500 h; v ce = 300 v; r g = 22 ; v ge = 15 v fig. 30 - typical energy loss vs. r g t j = 125 c; l = 500 h; v ce = 300 v; i ce = 5 a; v ge = 15 v fig. 31 - typical switching time vs. r g t j = 125 c; l = 500 h; v ce = 300 v;i ce = 5 a; v ge = 15 v q g , total gate charge (nc) 0204060 0 2 4 6 8 10 12 14 16 300v v ge (v) 00.511.522.5 0 10 20 30 vf (v) if (a) tj = 25c tj = 125c ic (a) energy (mj) 04812 0 0.2 0.4 0.6 e tot e on e off 04812 0.01 0.1 1 ic (a) swiching time (s) t f td off td on t r rg ( ) energy (mj) 0 1020304050 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 . 4 e (off) e (on) e (tot) 0 1020304050 0.01 0.1 1 rg ( ) ) t f td off td on t r
document number: 94476 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 10-sep-08 11 GB10RF60K igbt pim module, 12 a vishay high power products fig. 32 - typical diode i rr vs. i f t j = 125 c fig. 33 - typical diode i rr vs. r g t j = 125 c; i f = 5 a fig. 34 - typical diode i rr vs. di f /dt v cc = 300 v; v ge = 15 v; i ce = 5 a; t j = 125 c 4681012 0 10 20 30 if (a) irr (a) rg = 4.7 rg = 10 rg = 22 rg = 33 rg = 47 0 1020304050 0 5 10 15 20 rg ( ) ) 04008001200 0 5 10 15 20 dif/dt ( a/ s ) irr (a)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94476 12 revision: 10-sep-08 GB10RF60K vishay high power products igbt pim module, 12 a fig. 35 - maximum transient thermal im pedance, junction to case (brake igbt) fig. 36 - maximum transient thermal im pedance, junction to case (brake diode) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal response) 0.5 0.3 0.1 0.05 0.02 0.01 ri (c/w) 0.256 0.225 0.769 i (sec) 0.000207 0.00051 0.023774 notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc t1 , rectangular pulse duration (sec) thermal response (zth jc ) j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri t c t j 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal response) 0.5 0.3 0.1 0.05 0.02 0.01 notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc t1 , rectangular pulse duration (sec) thermal response (zth jc ) ri (c/w) 0.415 0.998 1.667 i (sec) 0.000106 0.001471 0.035702 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri t c t j
document number: 94476 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 10-sep-08 13 GB10RF60K igbt pim module, 12 a vishay high power products fig. c.t.1 - gate charge circuit (turn-off) fig. c.t.2 - rbsoa circuit fig. c.t.3 - s.c. soa circuit fig. c.t.4 - switching loss circuit fig. c.t.5 - resistive load circuit v cc v cc i cm + - i c v ge 1 ma r = r g d.u.t./ driver v cc + - + - 5 v l diode clamp/ d.u.t. v cc + - d.u.t. r g r g d.u.t./ driver v cc + - + - 5 v l diode clamp/ d.u.t. + - d.u.t. r g v cc v cc i cm r =
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94476 14 revision: 10-sep-08 GB10RF60K vishay high power products igbt pim module, 12 a ordering information table circuit configuration 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 npt 3 - current rating (10 = 10 a) 4 - circuit configuration (r = three phase bridge-brake-inverter with thermistor) 5 - package indicator (f = econo2) 6 - voltage rating (60 = 600 v) 7 - speed/type (k = ultrafast igbt/speed 8 to 60 khz) device code 5 13 24 67 g b 10 r f 60 k 23 24 r 26 17 32 14 11 27 33 35 2 8 36 3 8 30 39 22 30 50 47 4 8 45 nw nv p v n u pu ch-t ch-d p w p1d n 1d p2d n 2d p3d n 3d 2 5 8 links to related documents dimensions http://www.vishay.com/doc?95083 part marking information http://www.vishay.com/doc?95071
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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